| PART |
Description |
Maker |
| 24LC256TE/ST14 24LC256TE/SN 24AA256I/ST14 24AA256T |
Nonvolatile, 32-Position Digital Potentiometer
SERIAL EEPROM|32KX8|CMOS|TSSOP|14PIN|PLASTIC
Two/Four-Channel, I2C Adjustable Current DAC
SERIAL EEPROM|32KX8|CMOS|SOP|8PIN|PLASTIC
SERIAL EEPROM|32KX8|CMOS|DIP|8PIN|PLASTIC
Electronically Programmable Voltage Reference
SERIAL EEPROM|32KX8|CMOS|LLCC|8PIN|PLASTIC 串行EEPROM的| 32KX8 |的CMOS | LLCC | 8引脚|塑料
SERIAL EEPROM|32KX8|CMOS|TSSOP|8PIN|PLASTIC 串行EEPROM的| 32KX8 |的CMOS | TSSOP封装| 8引脚|塑料
|
Microchip Technology, Inc.
|
| KM62U256DL-L KM62U256DLG-10L KM62U256DLG-7L KM62U2 |
32KX8 BIT LOW POWER AND LOW VOLTAGE CMOS STATIC RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| K6X0808T1D K6X0808T1D-YQ85 K6X0808T1D-B K6X0808T1D |
32Kx8 bit Low Power CMOS Static RAM 32Kx8位低功耗CMOS静态RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K6X0808C1D-TQ55 K6X0808C1D-GF55 K6X0808C1D-DF55 K6 |
32Kx8 bit Low Power CMOS Static RAM 32Kx8位低功耗CMOS静态RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| LC35256FM LC35256FM-70U FT-55U FT-70U LC35256FT-70 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
256K (32768 words 8 bits) SRAM Control Pins: NOT OE and NOT CE
256K (32768 words x 8 bits) SRAM Control Pins: Not OE and Not CE
256K (32768 words X 8 bits) SRAM Control Pins: OE and CE
256K (32768 words 8 bits) SRAM Control Pins: OE and CE
SRAM,32KX8,CMOS,SOP,28PIN,PLASTIC
From old datasheet system
|
Intersil
Sanyo Semiconductor Corp
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| CXK58257CP-55LL |
SRAM,32KX8,CMOS,DIP,28PIN,PLASTIC
From old datasheet system
|
Sony Corp
|
| IS62C256 IC62LV256L IC62LV256L-15J IC62LV256L-15JI |
ASYNCHRONOUS STATIC RAM, Low Speed A.SRAM
32K x 8 Low Power SRAM with 3.3V
|
ICSI[Integrated Circuit Solution Inc]
|
| GLT6100L08LL-55TC GLT6100L08LL-70TC GLT6100L08LL-8 |
55ns; Ultra low power 64K x 16 CMOS SRAM
70ns; Ultra low power 64K x 16 CMOS SRAM
85ns; Ultra low power 64K x 16 CMOS SRAM
100ns; Ultra low power 64K x 16 CMOS SRAM
|
G-LINK Technology
|
| BS62LV4006 BS62LV4006EC-70 BS62LV4006PC BS62LV4006 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
Asynchronous 4M(512Kx8) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
Brilliance Semiconducto...
|
| AS6VA5128-BI AS6VA5128 AS6VA5128-BC |
2.7V to 3.3V 512K X 8 Intelliwatt low-power CMOS SRAM
2.7V to 3.3V 512K × 8 Intelliwatt low-power CMOS SRAM(2.7V 3.3V 512K × 8 Intelliwatt 低功CMOS 静态RAM)
2.7V to 3.3V 512K X 8 Intelliwatt low-power CMOS SRAM 2.7V.3V12k × 8 Intelliwatt低功耗CMOS SRAM
|
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
Alliance Semiconductor Corporation
|
